An Improved Equivalent Simulation Model for CMOS Integrated Hall Plates

An Improved Equivalent Simulation Model for CMOS Integrated Hall Plates

An improved equivalent simulation model for a CMOS-integrated Hall plate is described in this paper. Compared with existing models, this model covers voltage dependent non-linear effects, geometrical effects, temperature effects and packaging stress influences, and only includes a small number of physical and technological parameters. In addition, the structure of this model is relatively simpl...

an improved integrated model of urban development for tehran province

unplanned urban development imposes significant pressure on land resources and land use structures and brings about many negative socio-economic and environmental consequences. therefore, comprehensive studies should be applied to support urban land use management in the world and especially in developing countries. in iran, like many other developing countries, urban development is fast and of...

An Initiative Plan of the Equivalent Model for Simulation of the Welding Process

Many researchers content themselves with the 2D simulation of welding process instead of the 3D simulation, because of the time and the cost factors of the latter. In this research, the number of elements and nodes are reduced by an initiative plan (defining an equivalent model) for the simulation of welding. The welding process has been simulated by an uncoupled thermal-mechanical finite eleme...

Graphene/Si CMOS Hybrid Hall Integrated Circuits

Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS I...

Design Considerations for CMOS - Integrated Hall - effect Magnetic